US 11,955,441 B2
Interconnect structure and forming method thereof
Jian-Hong Lin, Yunlin County (TW); Kuo-Yen Liu, Hsinchu County (TW); Hsin-Chun Chang, Taipei (TW); Tzu-Li Lee, Yunlin County (TW); Yu-Ching Lee, Kaohsiung (TW); and Yih-Ching Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Mar. 28, 2022, as Appl. No. 17/706,039.
Application 17/018,381 is a division of application No. 15/396,909, filed on Jan. 3, 2017, granted, now 10,777,510, issued on Sep. 15, 2020.
Application 17/706,039 is a continuation of application No. 17/018,381, filed on Sep. 11, 2020, granted, now 11,302,654.
Claims priority of provisional application 62/426,837, filed on Nov. 28, 2016.
Prior Publication US 2022/0216165 A1, Jul. 7, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/58 (2006.01); H01L 27/02 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 23/522 (2013.01); H01L 23/5226 (2013.01); H01L 23/585 (2013.01); H01L 27/0248 (2013.01); H01L 21/76805 (2013.01); H01L 2224/06519 (2013.01); H01L 2224/09519 (2013.01); H01L 2224/30519 (2013.01); H01L 2224/33519 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An interconnect structure comprising:
a first dielectric layer over a substrate;
a first metal layer over the first dielectric layer, the first metal layer comprising a first portion and a second portion spaced apart from the first portion;
a second dielectric layer over the first metal layer;
a metal via having an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer, wherein the middle portion of the metal via has opposite sidewalls respectively set back from opposite sidewalls of the upper portion of the metal via; and
a second metal layer over the metal via, wherein from a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.