US 11,955,428 B2
Semiconductor structure and manufacturing method thereof
Hsin-Hung Chen, Tainan (TW); Min-Feng Kao, Chiayi (TW); Hsing-Chih Lin, Tainan (TW); Jen-Cheng Liu, Hsin-Chu (TW); and Dun-Nian Yaung, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Feb. 6, 2021, as Appl. No. 17/169,445.
Application 17/169,445 is a division of application No. 16/103,186, filed on Aug. 14, 2018, granted, now 10,916,502.
Application 16/103,186 is a continuation of application No. 15/259,992, filed on Sep. 8, 2016, granted, now 10,049,981, issued on Aug. 14, 2018.
Prior Publication US 2021/0159176 A1, May 27, 2021
Int. Cl. H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 21/0228 (2013.01); H01L 21/30604 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate having a first surface and a second surface opposite to the first surface;
a conductive via through the substrate;
a first insulation layer between the substrate and the conductive via, wherein a first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions;
a seed layer between the first insulation layer and the conductive via, wherein the first insulation layer is entirely separated from the conductive via by the seed layer; and
a second insulation layer over the second surface of the substrate, wherein a topmost surface of the first insulation layer, a top surface of the second insulation layer and a top surface of the conductive via are aligned with each other,
wherein the first insulation layer has a bottom surface aligned with the first surface of the substrate, and a width of the bottom surface of the first insulation layer is greater than a width of the topmost surface of the first insulation layer.