US 11,955,408 B2
Integrated circuit semiconductor device including through silicon via
Sohye Cho, Hwaseong-si (KR); Pilkyu Kang, Hwaseong-si (KR); Kwangjin Moon, Hwaseong-si (KR); and Taeseong Kim, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 29, 2020, as Appl. No. 17/036,145.
Claims priority of application No. 10-2020-0037059 (KR), filed on Mar. 26, 2020.
Prior Publication US 2021/0305130 A1, Sep. 30, 2021
Int. Cl. H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/50 (2006.01); H01L 23/528 (2006.01); H10B 10/00 (2023.01)
CPC H01L 23/481 (2013.01) [H01L 21/76898 (2013.01); H01L 23/5286 (2013.01); H10B 10/12 (2023.02); H01L 23/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit semiconductor device, comprising:
a substrate including a first surface and a second surface opposite the first surface;
a trench in the substrate, the trench extending from the first surface of the substrate toward the second surface of the substrate;
a through silicon via (TSV) landing part in the trench, the TSV landing part having:
a first portion spaced apart from the first surface of the substrate, and
a second portion between the first portion and the first surface of the substrate, the first portion being wider than the second portion;
a TSV hole in the substrate, the TSV hole extending from the second surface of the substrate and aligned with a bottom surface of the TSV landing part; and
a TSV in the TSV hole and in contact with the bottom surface of the TSV landing part wherein a width of the TSV increases and does not decrease in a direction from the first surface to the second surface.