US 11,955,392 B2
System and method for measuring device inside through-silicon via surroundings
Shuo-Wen Chang, Hsinchu (TW); Yu-Hsien Li, Hsinchu (TW); Min-Tar Liu, Jhubei (TW); and Yuan-Yao Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 12, 2021, as Appl. No. 17/318,388.
Prior Publication US 2022/0367299 A1, Nov. 17, 2022
Int. Cl. H01L 21/66 (2006.01); G01R 31/28 (2006.01); H01L 23/538 (2006.01)
CPC H01L 22/32 (2013.01) [G01R 31/2801 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 22/34 (2013.01); H01L 23/5384 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A testing unit comprising a metal layer including:
a metal structure;
a dielectric surrounding the metal structure; and
a plurality of TSVs extending in a first direction perpendicular to the metal layer and separated from the metal structure;
wherein the metal structure is coupled to first, second, third, and fourth contacts, wherein a current is applied at the first contact, an equal and opposite current is applied at the second contact, and a voltage is measured across the third and fourth contacts.