US 11,955,390 B2
Semiconductor wafer evaluation method and semiconductor wafer manufacturing method
Takahiro Nagasawa, Saga (JP); Yasuyuki Hashimoto, Saga (JP); and Hirotaka Kato, Nagasaki (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Appl. No. 16/962,559
Filed by SUMCO CORPORATION, Tokyo (JP)
PCT Filed Jan. 7, 2019, PCT No. PCT/JP2019/000042
§ 371(c)(1), (2) Date Jul. 16, 2020,
PCT Pub. No. WO2019/142662, PCT Pub. Date Jul. 25, 2019.
Claims priority of application No. 2018-006193 (JP), filed on Jan. 18, 2018.
Prior Publication US 2020/0411391 A1, Dec. 31, 2020
Int. Cl. H01L 21/66 (2006.01); G01N 21/88 (2006.01); G01N 21/95 (2006.01)
CPC H01L 22/20 (2013.01) [G01N 21/8806 (2013.01); G01N 21/9503 (2013.01); G01N 2021/8825 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method of evaluating a semiconductor wafer, the method comprising:
acquiring a reflection image as a bright-field image by receiving reflected light which is obtained when irradiating one surface side of a semiconductor wafer to be evaluated with light;
acquiring a scattered image as a dark-field image by receiving scattered light which is obtained when irradiating the surface side of the semiconductor wafer to be evaluated with light; and
obtaining a distance L between a bright zone that is observed in the reflection image and a bright zone that is observed in the scattered image,
wherein the semiconductor wafer to be evaluated is a semiconductor wafer in which a chamfered surface is formed in a wafer outer peripheral edge section, and
the method further comprising:
evaluating, based on L, a shape of a boundary part between a main surface on the surface side irradiated with the light of the semiconductor wafer to be evaluated and a chamfered surface adjacent to the main surface, and
acquiring the scattered image by irradiating a portion that includes at least a region on a side of the boundary part of the chamfered surface and a region on a side of the chamfered surface of the boundary part with light from a direction ranging from a 10° outside direction to a 50° outside direction, relative to upward in a vertical direction of the boundary part as a 0° direction and a wafer radial direction which is perpendicular to the 0° direction and which passes through the boundary part as a 90° direction.