US 11,955,383 B2
Semiconductor device and manufacturing method thereof
Jie Liu, Hefei (CN); Bin Yang, Hefei (CN); and Zhan Ying, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Nov. 7, 2021, as Appl. No. 17/453,851.
Application 17/453,851 is a continuation of application No. PCT/CN2021/106487, filed on Jul. 15, 2021.
Claims priority of application No. 202110743999.9 (CN), filed on Jul. 1, 2021.
Prior Publication US 2023/0005790 A1, Jan. 5, 2023
Int. Cl. H01L 23/49 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/76816 (2013.01); H01L 21/76846 (2013.01); H01L 23/481 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A manufacturing method of a semiconductor device, comprising:
providing a semiconductor base, wherein a first medium layer is formed on a first surface of the base;
patterning the first medium layer to form a groove extending along the base in the base;
forming a dielectric layer and a first barrier layer sequentially on an inner wall of the groove;
forming a first auxiliary layer and a first metal layer sequentially in the groove, wherein the first metal layer is located on a side of the first auxiliary layer towards the first medium layer, wherein the materials of the dielectric layer and the first auxiliary layer are the same or different;
thinning the base on a second surface of the base to expose the first auxiliary layer;
removing the first auxiliary layer to form a first opening;
forming a second medium layer on the second surface of the base, wherein the second medium layer has a second opening, and the second opening exposes the first opening;
forming a second metal layer on the second surface of the base, wherein the second metal layer fills the first opening;
etching and removing the dielectric layer to form an air gap structure, wherein the air gap structure is a gap between the first barrier layer and the inner wall of the groove;
wherein etching and removing the dielectric layer to form the air gap structure comprises:
etching and removing the dielectric layer in the first medium layer and the groove; and
rapidly depositing a third medium layer on the first surface of the base to form the air gap structure in the groove.