US 11,955,382 B2
Reverse selective etch stop layer
Kevin Kashefi, San Ramon, CA (US); Alexander Jansen, San Jose, CA (US); Mehul Naik, San Jose, CA (US); He Ren, San Jose, CA (US); Lu Chen, Cupertino, CA (US); and Feng Chen, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 3, 2020, as Appl. No. 17/110,818.
Prior Publication US 2022/0181204 A1, Jun. 9, 2022
Int. Cl. H01L 21/76 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/76885 (2013.01) [H01L 21/67167 (2013.01); H01L 21/67207 (2013.01); H01L 21/76829 (2013.01); H01L 21/76883 (2013.01); H01L 21/68707 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method comprising:
selectively depositing an etch stop layer on a first dielectric material over a first metal material, the first dielectric material comprising a plurality of features formed therein with the first metal material within the plurality of features;
depositing a second metal material on the first metal material and the etch stop layer;
etching the second metal material to expose a portion of the etch stop layer; and
removing the portion of the etch stop layer exposed by etching the second metal material to expose a top surface of the first dielectric material,
wherein a top surface of the second metal material is higher than the exposed top surface of the first dielectric material.