US 11,955,381 B2
Low-temperature plasma pre-clean for selective gap fill
Yi Xu, San Jose, CA (US); Yufei Hu, Fremont, CA (US); Kazuya Daito, Milipitas, CA (US); Geraldine M. Vasquez, Mountain View, CA (US); Da He, Santa Clara, CA (US); Jallepally Ravi, San Ramon, CA (US); Yu Lei, Belmont, CA (US); and Dien-Yeh Wu, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 22, 2020, as Appl. No. 16/908,076.
Prior Publication US 2021/0398850 A1, Dec. 23, 2021
Int. Cl. H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76883 (2013.01) [H01J 37/32174 (2013.01); H01L 21/02049 (2013.01); H01L 21/02063 (2013.01); H01L 21/67028 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of pre-cleaning, the method comprising:
exposing a substrate on a pedestal, the substrate comprising a surface structure including a metal bottom surface comprising one or more of tungsten (W), cobalt (Co), or ruthenium (Ru), exposed sidewall surfaces comprising dielectric material, and a field of dielectric, to a plasma treatment comprising an oxygen plasma to remove chemical residual and/or impurities from the metal bottom surface, the exposed sidewall surfaces comprising dielectric material, and the field of the dielectric and/or repair surface defects in the exposed sidewall surfaces comprising dielectric material and the field of the dielectric; and
setting the plasma at a power and setting a temperature of the pedestal that comprises a cooling feature to greater than or equal to −20° C. and less than or equal to 60° C., wherein the pre-cleaning is effective to enhance selective metal deposition on the metal bottom surface.