US 11,955,371 B2
Semiconductor device and method for preparing semiconductor device
Jingwen Lu, Hefei (CN); Hai-Han Hung, Hefei (CN); and Meng-Cheng Chen, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Aug. 8, 2021, as Appl. No. 17/444,669.
Application 17/444,669 is a continuation of application No. PCT/CN2021/099856, filed on Jun. 11, 2021.
Claims priority of application No. 202010811395.9 (CN), filed on Aug. 13, 2020.
Prior Publication US 2022/0285204 A1, Sep. 8, 2022
Int. Cl. H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76224 (2013.01) [H01L 21/31055 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 21/76897 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for preparing a semiconductor device, comprising:
providing a semiconductor substrate, wherein a trench is formed on the semiconductor substrate, a filling layer is formed in the trench, and a void is formed in the filling layer;
removing a portion of the filling layer to expose the void;
forming a plug, wherein the plug is configured to plug the void and extends into the void by at least a preset distance; and
removing a portion of the filling layer and remaining the plug with at least a preset height until the filling layer reaches a preset thickness to form a contact hole.