US 11,955,370 B2
Semiconductor devices and methods of manufacture
Bo-Cyuan Lu, New Taipei (TW); Ting-Gang Chen, Taipei (TW); Sung-En Lin, Hsinchu County (TW); Chunyao Wang, Zhubei (TW); Yung-Cheng Lu, Hsinchu (TW); Chi On Chui, Hsinchu (TW); Tai-Chun Huang, Hsinchu (TW); and Chieh-Ping Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 18, 2020, as Appl. No. 17/025,528.
Claims priority of provisional application 63/016,488, filed on Apr. 28, 2020.
Prior Publication US 2021/0335657 A1, Oct. 28, 2021
Int. Cl. H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 21/76224 (2013.01) [H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/31116 (2013.01); H01L 21/76837 (2013.01); H01L 21/823481 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
depositing a material layer in a trench by performing a plurality of deposition cycles until the material layer completely fills the trench, wherein after the material layer completely fills the trench, the material layer is free of any voids disposed therein, and wherein a first deposition cycle of the plurality of deposition cycles comprises:
introducing a first precursor into the trench such that portions of the first precursor react with sidewalls and a bottom surface of the trench to form a first precursor product;
etching the first precursor product to expose upper portions of the sidewalls of the trench, wherein the etching leaves the first precursor product on the bottom surface of the trench intact, and wherein the etching utilizes a chemical reaction; and
introducing a second precursor into the trench, such that portions of the second precursor react with the first precursor product to from a material layer on the bottom surface and lower portions of the sidewalls of the trench, wherein the second precursor does not react with the upper portions of the sidewalls of the trench that have been exposed by etching the first precursor product such that the material layer is not formed on the upper portions of the sidewalls of the trench.