CPC H01L 21/67383 (2013.01) [H01L 21/6732 (2013.01); H01L 21/67346 (2013.01); H01L 21/67379 (2013.01); H01L 21/02 (2013.01); H01L 21/67017 (2013.01)] | 13 Claims |
10. A semiconductor manufacturing apparatus comprising:
a magazine including N input ports and a bottom space under a bottom-most input port among the N input ports;
a magazine supporting equipment configured to support the magazine; and
a gas injection part configured to inject an etching gas into the magazine and the magazine supporting equipment, wherein the gas injection part is separated from the magazine in a first direction,
wherein the magazine supporting equipment includes:
a contact plate in contact with the magazine;
a first sidewall plate extending vertically from one end of the contact plate; and
a second sidewall plate parallel to the first sidewall plate, and extending vertically from another end of the contact plate, wherein the first sidewall plate, the magazine, and the second sidewall plate are separated from each other in a second direction perpendicular to the first direction,
wherein the first sidewall plate extends along at least a part of a first sidewall of the magazine,
the second sidewall plate extends along at least a part of a second sidewall of the magazine,
the first sidewall plate and the second sidewall plate include N+1 control openings through which the etching gas flows in and out, the N+1 control openings overlap the N input ports and the bottom space, respectively, in a plan view of a plane parallel to the first sidewall plate and the second sidewall plate, and
the N is a natural number of 2 or more.
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