US 11,955,354 B2
Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrate
Tadaaki Kaneko, Hyogo (JP)
Assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
Appl. No. 17/600,086
Filed by KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
PCT Filed Mar. 25, 2020, PCT No. PCT/JP2020/013203
§ 371(c)(1), (2) Date Sep. 29, 2021,
PCT Pub. No. WO2020/203517, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 2019-069279 (JP), filed on Mar. 29, 2019.
Prior Publication US 2022/0189798 A1, Jun. 16, 2022
Int. Cl. F27D 7/02 (2006.01); C30B 23/02 (2006.01); C30B 33/02 (2006.01); F27B 17/00 (2006.01); F27D 5/00 (2006.01); F27D 11/00 (2006.01); H01L 21/67 (2006.01); H01L 21/324 (2006.01)
CPC H01L 21/67109 (2013.01) [C30B 23/02 (2013.01); C30B 33/02 (2013.01); F27B 17/0025 (2013.01); F27D 5/0037 (2013.01); F27D 7/02 (2013.01); F27D 11/00 (2013.01); H01L 21/324 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A device for manufacturing a semiconductor substrate comprising:
a main container that accommodates a semiconductor substrate;
a high melting point container; and
a heating furnace having a heating chamber that accommodates the main container and the high melting point container,
wherein the heating furnace includes a heating source in a direction intersecting with main surface of the semiconductor substrate to be arranged in the heating chamber,
wherein the main container is made of a material containing all atomic species constituting the semiconductor substrate,
wherein the high melting point container comprising a gaseous species vapor pressure space which accommodates the main container and in which a vapor pressure environment of a gaseous species of an atomic species constituting the semiconductor substrate is formed,
wherein an inside of the main container is exhausted through the gaseous species vapor pressure space.