US 11,955,344 B2
Methods and structures for changing wafer bow
JinHao Li, Wuhan (CN); FeiFei Tu, Wuhan (CN); Xiao Hou, Wuhan (CN); and Xianchun Deng, Wuhan (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Jan. 3, 2022, as Appl. No. 17/646,817.
Application 17/646,817 is a continuation of application No. PCT/CN2021/127767, filed on Oct. 30, 2021.
Prior Publication US 2023/0134311 A1, May 4, 2023
Int. Cl. H01L 21/477 (2006.01); H01L 21/3105 (2006.01); H01L 23/00 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 21/477 (2013.01) [H01L 21/3105 (2013.01); H01L 23/562 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method of controlling bow of a substrate, comprising:
providing a substrates;
depositing a dielectric layer which includes one of high density plasma (HDP) silicon oxide material and tetraethyl orthosilicate (TEOS) material over the substrate, the substrate having a downward bow with respect to a reference plane and a value of the bow being negative after the one of the HDP silicon oxide material and the TEOS material is deposited on the substrate; and
adjusting the bow of the substrate by performing an annealing process on the substrate, wherein:
the annealing process includes one of a first process condition and a second process condition, the first process condition inducing a tensile stress on the substrate to cause the substrate to bow upward with respect to the reference plane, and the second process condition inducing a compressive stress on the substrate to cause the substrate to bow downward with respect to the reference plane.