US 11,955,340 B2
Semiconductor device and method of manufacturing the same
Dae Hee Han, Icheon-si Gyeonggi-do (KR); and Sung Soon Kim, Icheon-si Gyeonggi-do (KR)
Assigned to SK hynix Inc., Icheon-si Gyeonggi-do (KR)
Filed by SK hynix Inc., Icheon-si Gyeonggi-do (KR)
Filed on Jun. 2, 2023, as Appl. No. 18/328,660.
Application 18/328,660 is a continuation of application No. 17/185,670, filed on Feb. 25, 2021, granted, now 11,710,639.
Claims priority of application No. 10-2020-0105558 (KR), filed on Aug. 21, 2020.
Prior Publication US 2023/0317461 A1, Oct. 5, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/3003 (2013.01) [H01L 21/324 (2013.01); H01L 29/66666 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a stack including alternately stacked conductive layers and insulating layers;
a channel layer passing through the stack, the channel layer comprising deuterium; and
a data storage layer between the conductive layers and the channel layer, the data storage layer comprising deuterium at a concentration higher than a concentration of deuterium in the channel layer.