US 11,955,338 B2
Directional deposition for semiconductor fabrication
Shih-Chun Huang, Hsinchu (TW); Ya-Wen Yeh, Taipei (TW); Chien-Wen Lai, Hsinchu (TW); Wei-Liang Lin, Hsin-Chu (TW); Ya Hui Chang, Hsinchu (TW); Yung-Sung Yen, New Taipei (TW); Ru-Gun Liu, Hsinchu County (TW); Chin-Hsiang Lin, Hsin-Chu (TW); and Yu-Tien Shen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jan. 30, 2023, as Appl. No. 18/161,662.
Application 17/384,921 is a division of application No. 16/107,699, filed on Aug. 21, 2018, granted, now 11,075,079, issued on Jul. 27, 2021.
Application 18/161,662 is a continuation of application No. 17/384,921, filed on Jul. 26, 2021, granted, now 11,569,090.
Claims priority of provisional application 62/589,257, filed on Nov. 21, 2017.
Prior Publication US 2023/0170218 A1, Jun. 1, 2023
Int. Cl. H01L 21/033 (2006.01); C23C 16/04 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01); H01L 21/308 (2006.01); H01L 21/3205 (2006.01)
CPC H01L 21/0337 (2013.01) [C23C 16/042 (2013.01); C23C 16/4582 (2013.01); C23C 16/50 (2013.01); H01L 21/02274 (2013.01); H01L 21/266 (2013.01); H01L 21/3086 (2013.01); H01L 21/32051 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a substrate having a top surface, wherein a first hard mask layer is formed over the top surface and a second hard mask layer is formed over the first hard mask layer;
forming a first pattern in the second hard mask layer, wherein the first pattern includes a first mandrel oriented along a first direction and a second mandrel oriented in a second direction different from the first direction, wherein the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall;
depositing a material layer towards the first mandrel and the second mandrel such that the material layer is formed on the top surface and the first sidewall but not the second sidewall;
removing portions of the material layer from the top surface of the first mandrel, wherein at least a portion of the material layer on the first sidewall remains; and
removing the first mandrel but not the second mandrel and the portion of the material layer remaining on the first sidewall.