US 11,955,337 B2
Substrate processing method and substrate processing system
Toru Hisamatsu, Miyagi (JP); Takayuki Katsunuma, Miyagi (JP); Shinya Ishikawa, Miyagi (JP); Yoshihide Kihara, Miyagi (JP); and Masanobu Honda, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 17/298,332
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
PCT Filed Jul. 12, 2019, PCT No. PCT/JP2019/027722
§ 371(c)(1), (2) Date May 28, 2021,
PCT Pub. No. WO2020/110363, PCT Pub. Date Jun. 4, 2020.
Claims priority of application No. 2018-225894 (JP), filed on Nov. 30, 2018.
Prior Publication US 2022/0115235 A1, Apr. 14, 2022
Int. Cl. H01L 21/033 (2006.01); H01L 21/311 (2006.01); C23C 16/04 (2006.01)
CPC H01L 21/0337 (2013.01) [H01L 21/31144 (2013.01); C23C 16/042 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
providing a substrate including a mask;
forming a film on the mask;
forming a reaction layer on a surface layer of the film; and
removing the reaction layer by applying energy to the reaction layer,
wherein in the forming of the reaction layer, a temperature of the substrate is set according to a thickness of the reaction layer to be formed.