US 11,955,335 B2
Method and apparatus for coating photo resist over a substrate
Tung-Hung Feng, Hsinchu (TW); Hui-Chun Lee, Hsinchu (TW); Sheng-Wen Jiang, Hsinchu (TW); and Shih-Che Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 8, 2022, as Appl. No. 17/883,581.
Application 17/883,581 is a division of application No. 17/037,785, filed on Sep. 30, 2020, granted, now 11,545,361.
Claims priority of provisional application 63/017,490, filed on Apr. 29, 2020.
Prior Publication US 2022/0382158 A1, Dec. 1, 2022
Int. Cl. H01L 21/02 (2006.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/0274 (2013.01) [G03F 7/162 (2013.01); G03F 7/70033 (2013.01); H01L 21/033 (2013.01); H01L 21/67017 (2013.01); H01L 21/67051 (2013.01); H01L 21/68764 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A photo resist coating apparatus, comprising:
a wafer holder configured to support a wafer and to rotate the wafer;
a nozzle configured to dispense a photo resist;
another nozzle configured to dispense a solvent;
an arm coupled to the nozzle and configured to move the nozzle horizontally and vertically; and
a control system including a processor and a memory storing a program and a coating recipe and configured to control the wafer holder, the nozzle, the another nozzle and the arm according to the coating recipe, wherein: the program, when executed by the processor, causes the control system to perform:
starting dispensing the photo resist from the nozzle while rotating the wafer at a first speed while the nozzle is at a center of the wafer;
continuing dispensing the photo resist while rotating the wafer at a second speed different from the first speed while the nozzle is at the center of the wafer for a second time duration T2;
continuing dispensing the photo resist while rotating the wafer at a third speed different from the second speed while the nozzle is at the center of the wafer for a third time duration T3;
continuing dispensing the photo resist while rotating the wafer at a fourth speed different from the third speed while the nozzle is at the center of the wafer for a fourth time duration T4;
continuing dispensing the photo resist while rotating the wafer at a fifth speed and moving the nozzle horizontally from the center toward an edge of the wafer;
continuing dispensing the photo resist while rotating the wafer at a sixth speed different from the fifth speed while the nozzle is at the edge of the wafer; and
after stopping the movement of the nozzle, stopping dispensing the photo resist while rotating the wafer at a seventh speed different from the sixth speed.