US 11,955,334 B2
Vapor phase epitaxy method
Gregor Keller, Heilbronn (DE); Clemens Waechter, Lauffen am Neckar (DE); and Thorsten Wierzkowski, Heilbronn (DE)
Assigned to AZUR SPACE Solar Power GmbH, Heilbronn (DE)
Filed by AZUR SPACE SOLAR POWER GMBH, Heilbronn (DE)
Filed on Dec. 21, 2020, as Appl. No. 17/129,744.
Claims priority of application No. 10 2019 008 931.6 (DE), filed on Dec. 20, 2019.
Prior Publication US 2021/0193464 A1, Jun. 24, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C30B 25/14 (2006.01); C30B 29/42 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/02579 (2013.01) [C23C 16/301 (2013.01); C30B 25/14 (2013.01); C30B 29/42 (2013.01); H01L 21/02546 (2013.01); H01L 21/02576 (2013.01); H01L 21/0262 (2013.01); H01L 29/06 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A vapor phase epitaxy method comprising:
growing a III-V layer on a substrate in a reaction chamber from a vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for Galium, and at least one second precursor for an Arsine compound;
during said growing, setting, when a first growth height of the Ill-V layer is reached, a first initial doping level via a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow;
during said growing, changing, stepwise or continuously, the ratio of the first mass flow of the first precursor to the second mass flow of the second precursor; and
during said growing, increasing, stepwise or continuously, a mass flow of a third Silane precursor for an n-type dopant in the epitaxial gas flow, doping of the III-V layer with a growth height of at least 10 μm being changed until a target n-doping level of at most 5·1016 cm−3 is reached.