US 11,955,329 B2
Method of forming conductive feature including cleaning step
Cheng-Wei Chang, Taipei (TW); Min-Hsiu Hung, Tainan (TW); Chun-I Tsai, Hsinchu (TW); Ken-Yu Chang, Hsinchu (TW); and Yi-Ying Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 28, 2023, as Appl. No. 18/309,298.
Application 18/309,298 is a continuation of application No. 17/205,847, filed on Mar. 18, 2021, granted, now 11,670,499.
Prior Publication US 2023/0268173 A1, Aug. 24, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/02068 (2013.01) [H01L 21/76871 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
depositing a first tungsten feature in an opening with a first deposition process, the first deposition process leaving tungsten seeds on sidewalls of the opening; and
performing a seed relocation process, the seed relocation process comprising:
oxidizing the tungsten seeds with a plasma process to form oxidized tungsten seeds; and
removing the oxidized tungsten seeds with a rinsing process, the rinsing process comprising deionized water.