US 11,955,319 B2
Processing chamber with multiple plasma units
Kazuya Daito, Milipitas, CA (US); Yi Xu, San Jose, CA (US); Yu Lei, Belmont, CA (US); Takashi Kuratomi, San Jose, CA (US); Jallepally Ravi, San Ramon, CA (US); Pingyan Lei, San Jose, CA (US); and Dien-Yeh Wu, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 20, 2022, as Appl. No. 17/844,245.
Application 17/844,245 is a division of application No. 17/101,074, filed on Nov. 23, 2020, abandoned.
Claims priority of provisional application 62/960,293, filed on Jan. 13, 2020.
Claims priority of provisional application 62/941,148, filed on Nov. 27, 2019.
Prior Publication US 2022/0319813 A1, Oct. 6, 2022
Int. Cl. C23C 16/50 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H05H 1/46 (2006.01)
CPC H01J 37/32357 (2013.01) [C23C 16/45536 (2013.01); C23C 16/50 (2013.01); H01J 37/32422 (2013.01); H01L 21/67028 (2013.01); H01L 21/67069 (2013.01); H05H 1/4652 (2021.05); H01J 2237/327 (2013.01); H01J 2237/332 (2013.01); H01J 2237/335 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A processing method comprising: exposing a substrate to a remote plasma that remotely impacts the substrate and exposing the substrate to a direct plasma that directly impacts the substrate in a processing chamber, wherein the direct plasma is generated first between a pedestal electrode and an ion filter and the remote plasma is generated between the ion filter and one or more of an ICP coil and a top electrode after the direct plasma is generated.