US 11,955,318 B2
Ash rate recovery method in plasma strip chamber
Yongkwan Kim, Fremont, CA (US); Changhun Lee, San Jose, CA (US); Kyeong-Tae Lee, Livermore, CA (US); Chung Hoan Kim, San Jose, CA (US); and Youngmin Shin, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 12, 2021, as Appl. No. 17/199,729.
Prior Publication US 2022/0293395 A1, Sep. 15, 2022
Int. Cl. C23C 16/40 (2006.01); G03F 7/42 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32357 (2013.01) [C23C 16/402 (2013.01); G03F 7/427 (2013.01); H01J 37/32724 (2013.01); H01J 37/32733 (2013.01); H01J 37/32899 (2013.01); H01J 2237/338 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for processing substrates, the method comprising:
positioning a passivation substrate in a processing volume of a processing chamber, wherein the passivation substrate has a silicon chloride residue formed thereon;
evaporating the silicon chloride residue from the passivation substrate;
depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume;
exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer; and
ashing a layer from a production substrate in the processing volume of the processing chamber having the silicon oxide passivation layer on the one or more interior surfaces.