US 11,955,316 B2
Substrate processing method, method for manufacturing semiconducor device, and plasma processing apparatus
Takayuki Katsunuma, Miyagi (JP); and Daisuke Nishide, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Sep. 29, 2020, as Appl. No. 17/035,899.
Claims priority of application No. 2019-181487 (JP), filed on Oct. 1, 2019.
Prior Publication US 2021/0098234 A1, Apr. 1, 2021
Int. Cl. H01J 37/32 (2006.01); H01L 21/311 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01)
CPC H01J 37/32174 (2013.01) [H01J 37/3244 (2013.01); H01L 21/31116 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for processing a substrate comprising:
(a) providing a substrate including a first region and a second region into a chamber;
(b) forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas; and
(c) etching the first region by generating a second plasma from a second processing gas containing an inert gas,
wherein the first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms.