US 11,955,295 B2
Photoelectric conversion element and method for manufacturing the same
Shunsuke Shimo, Yokohama (JP); and Kenji Todori, Yokohama (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Aug. 17, 2021, as Appl. No. 17/404,313.
Claims priority of application No. 2021-035964 (JP), filed on Mar. 8, 2021.
Prior Publication US 2022/0285103 A1, Sep. 8, 2022
Int. Cl. H01L 31/032 (2006.01); H01G 9/20 (2006.01); H10K 30/10 (2023.01); H10K 71/12 (2023.01)
CPC H01G 9/2045 (2013.01) [H10K 30/10 (2023.02); H10K 71/12 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A photoelectric conversion element, comprising:
a first conductive layer;
a second conductive layer; and
a photoelectric conversion layer located between the first conductive layer and the second conductive layer,
the photoelectric conversion layer including Sn and Pb,
the photoelectric conversion layer including
a first partial region,
a second partial region between the first partial region and the second conductive layer, and
a third partial region between the second partial region and the second conductive layer,
the first partial region including a first Sn concentration and a first Pb concentration,
the second partial region including at least one of a second Sn concentration or a second Pb concentration,
the second Sn concentration being less than the first Sn concentration,
the second Pb concentration being greater than the first Pb concentration,
the third partial region including Sn, oxygen, and Pb.