US 11,955,250 B2
Porous silicon charged particle, X-ray, gamma-ray and/or thermal neutron collimators and methods of manufacturing the same
Vladimir Kochergin, Christiansburg, VA (US)
Filed by Vladimir Kochergin, Christiansburg, VA (US)
Filed on Aug. 30, 2021, as Appl. No. 17/460,721.
Prior Publication US 2023/0065517 A1, Mar. 2, 2023
Int. Cl. G21K 1/02 (2006.01)
CPC G21K 1/025 (2013.01) 24 Claims
OG exemplary drawing
 
1. An X-ray, gamma ray, charged particle and/or thermal neutron collimator device comprising:
a semiconductor substrate or host wafer having an array of substantially uniform parallel hollow pores there through, the pores having characteristic lateral dimensions in the plane of the host wafer within the range of from about 0.1 μm to about 10 μm,
said wafer having first and second surfaces substantially perpendicular to the axis of the pores,
wherein the walls of each pore are conformally coated with at least one layer of material different than that of the host wafer, and wherein the thickness of each of said layers of transparent material is at least 5 nm,
the thickness of semiconductor substrate is within the range of from about 50 μm to about 750 μm.