US 11,955,194 B2
Tracking and refreshing state metrics in memory sub-systems
Michael Sheperek, Longmont, CO (US); Bruce A. Liikanen, Berthoud, CO (US); and Steven Michael Kientz, Westminster, CO (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 11, 2023, as Appl. No. 18/133,103.
Application 18/133,103 is a continuation of application No. 17/301,350, filed on Mar. 31, 2021, granted, now 11,636,913.
Claims priority of provisional application 62/706,462, filed on Aug. 18, 2020.
Prior Publication US 2023/0245708 A1, Aug. 3, 2023
Int. Cl. G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 29/12 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01)
CPC G11C 29/42 (2013.01) [G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 29/12015 (2013.01); G11C 29/44 (2013.01); G11C 2207/2254 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
responsive to detecting a triggering event, randomly selecting, from a subset of memory blocks of the memory device, a set of memory cells, wherein the subset of memory blocks is associated with a first bin of read voltage offsets (RVOs) of a plurality of bins of RVOs, and wherein the first bin of RVOs is associated with a first set of RVOs applied to memory cells during read operations;
applying, to the set of memory cells, a first set of calibration read operations using the first bin of RVOs;
applying, to the set of memory cells, a second set of calibration read operations using a second bin of RVOs of the plurality of bins of RVOs;
selecting, based on at least the first set of calibration read operations and the second set of calibration read operations, a target bin of RVOs from a group comprising the first bin of RVOs and the second bin of RVOs; and
associating the subset of memory blocks with the target bin of RVOs.