US 11,955,191 B2
Semiconductor memory devices with diode-connected MOS
Perng-Fei Yuh, Hsinchu (TW); Tung-Cheng Chang, Xihu Township (TW); Gu-Huan Li, Zhubei (TW); Chia-En Huang, Xinfeng Township (TW); Chun-Ying Lee, Hsinchu (TW); and Yih Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 2, 2023, as Appl. No. 18/328,110.
Application 18/328,110 is a division of application No. 17/484,730, filed on Sep. 24, 2021, granted, now 11,688,481.
Claims priority of provisional application 63/172,388, filed on Apr. 8, 2021.
Prior Publication US 2023/0307074 A1, Sep. 28, 2023
Int. Cl. G11C 17/16 (2006.01); G11C 17/18 (2006.01); H10B 20/20 (2023.01)
CPC G11C 17/16 (2013.01) [G11C 17/18 (2013.01); H10B 20/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a plurality of one-time-programmable (OTP) memory cells;
wherein each of the plurality of OTP memory cells comprises N first transistors, N second transistors, N third transistors, N diode-connected transistors, and a capacitor, N being a positive integer; and
wherein each of the N first transistors is coupled to a respective one of the N second transistors, a respective one of the N third transistors, and a respective one of the M diode-connected transistors in series, with one terminal of the capacitor connected to a node between the respective second transistor and the respective third transistor.