US 11,955,078 B2
Display device
Heerim Song, Seoul (KR); Heejean Park, Suwon-si (KR); Yujin Lee, Suwon-si (KR); Cheol-Gon Lee, Suwon-si (KR); and Mukyung Jeon, Ulsan (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Aug. 15, 2022, as Appl. No. 17/888,295.
Claims priority of application No. 10-2021-0129293 (KR), filed on Sep. 29, 2021.
Prior Publication US 2023/0098891 A1, Mar. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G09G 3/3233 (2016.01); H10K 59/13 (2023.01); H10K 59/60 (2023.01); H10K 59/65 (2023.01)
CPC G09G 3/3233 (2013.01) [G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/0291 (2013.01); G09G 2354/00 (2013.01); G09G 2360/144 (2013.01); G09G 2360/148 (2013.01); H10K 59/13 (2023.02); H10K 59/60 (2023.02); H10K 59/65 (2023.02)] 40 Claims
OG exemplary drawing
 
1. A display device comprising:
a plurality of pixels each including a light emitting element and a pixel driving circuit connected with the light emitting element and configured to drive the light emitting element; and
a plurality of sensors each including a light sensing element and a sensor driving circuit connected with the light sensing element and configured to output a sensing signal corresponding to a light,
wherein the sensor driving circuit includes:
a reset transistor including a first electrode configured to receive a reset signal, a second electrode connected with a first sensing node, and a third electrode configured to receive a reset control signal;
an amplification transistor including a first electrode configured to receive a sensing driving voltage, a second electrode connected with a second sensing node, and a third electrode connected with the first sensing node; and
an output transistor including a first electrode connected with the second sensing node, a second electrode connected with a sensing line, and a third electrode configured to receive an output control signal,
wherein the reset transistor is an oxide semiconductor transistor.