US 11,953,827 B2
Molecular resist composition and patterning process
Masahiro Fukushima, Joetsu (JP); Masaki Ohashi, Joetsu (JP); and Kazuhiro Katayama, Joetsu (JP)
Assigned to Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed by Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed on Apr. 24, 2020, as Appl. No. 16/858,092.
Claims priority of application No. 2019-098585 (JP), filed on May 27, 2019.
Prior Publication US 2020/0379345 A1, Dec. 3, 2020
Int. Cl. G03F 7/004 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01)
CPC G03F 7/004 (2013.01) [G03F 7/162 (2013.01); G03F 7/20 (2013.01); G03F 7/30 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A molecular resist composition comprising:
(A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a sulfur atom and a phenyl group substituted with an acid labile group of acetal form having the following formula (A′), the phenyl group being attached to the sulfur atom, and
(B) an organic solvent,
the resist composition being free of a base resin,

OG Complex Work Unit Chemistry
wherein L3 and L4 are each independently a single bond, ether bond, ester bond, sulfonate bond, carbonate bond or carbamate bond,
XL2 is a single bond or a C1-C40 divalent hydrocarbon group which may contain a heteroatom,
Ra is hydrogen or a C1-C20 monovalent hydrocarbon group which may contain a heteroatom,
Rb and Rc are each independently a C1-C40 monovalent hydrocarbon group which may contain a heteroatom, Rb and Rc may bond together to form a ring with the oxygen atoms to which they are attached and the intervening carbon atom.