US 11,953,765 B2
Superlattice electro-optic device including reconfigurable optical elements
Jamal I. Mustafa, Goleta, CA (US); Justin Gordon Adams Wehner, Goleta, CA (US); and Christopher R. Koontz, Manhattan Beach, CA (US)
Assigned to RAYTHEON COMPANY, Waltham, MA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on Apr. 10, 2023, as Appl. No. 18/298,097.
Application 18/298,097 is a division of application No. 16/529,978, filed on Aug. 2, 2019, granted, now 11,650,438.
Prior Publication US 2023/0244096 A1, Aug. 3, 2023
Int. Cl. G02F 1/017 (2006.01)
CPC G02F 1/017 (2013.01) [G02F 2203/11 (2013.01); G02F 2203/52 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A solid-state electro-optic device with an electrically variable aperture, comprising:
at least one superlattice semiconductor device including an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant;
wherein the alternating stack of the first semiconductor layers includes a patterned portion defining a first transparent transitioning region between a first pair of electrical connectors, and a second transparent transitioning region between a second pair of electrical connectors;
wherein the first and second pairs of electrical connectors are configured to receive a first voltage to induce a first optical state of the first and second transparent transitioning regions such that a first amount of light is transmitted through the alternating stack; and
wherein the first and second pairs of electrical connectors are configured to receive a second voltage to induce a second optical state to the first transparent transitioning region, while maintaining the first state of the second transparent transitioning region such that a second amount of light different from the first amount is transmitted through the alternating stack.