US 11,953,730 B2
Method of fabricating semiconductor structure
Feng-Wei Kuo, Hsinchu County (TW); and Wen-Shiang Liao, Miaoli County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 11, 2022, as Appl. No. 17/862,382.
Application 17/862,382 is a continuation of application No. 16/901,010, filed on Jun. 15, 2020, granted, now 11,428,870.
Prior Publication US 2022/0342155 A1, Oct. 27, 2022
Int. Cl. G02B 6/34 (2006.01); G02B 6/124 (2006.01); G02B 6/13 (2006.01); H01L 21/02 (2006.01)
CPC G02B 6/34 (2013.01) [G02B 6/124 (2013.01); G02B 6/13 (2013.01); H01L 21/02 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
disposing photonic dies on a carrier, wherein the photonic dies carried by the carrier are separated from one other;
providing a semiconductor substrate comprising optical reflective layers; and
transfer-bonding the photonic dies from the carrier to the optical reflective layers of the second semiconductor substrate; and
performing a singulation process to cut the semiconductor substrate to form singulated semiconductor structures.