US 11,953,462 B2
Glass electrochemical sensor with wafer level stacking and through glass via (TGV) interconnects
Robert Alan Bellman, Ithaca, NY (US); Jeffrey Stapleton King, Menlo Park, CA (US); and Scott Christopher Pollard, Big Flats, NY (US)
Assigned to Corning Incorporated, Corning, NY (US)
Filed by CORNING INCORPORATED, Corning, NY (US)
Filed on Mar. 16, 2023, as Appl. No. 18/122,192.
Application 18/122,192 is a division of application No. 16/608,500, granted, now 11,630,076, previously published as PCT/US2018/029732, filed on Apr. 27, 2018.
Claims priority of provisional application 62/491,408, filed on Apr. 28, 2017.
Prior Publication US 2023/0221278 A1, Jul. 13, 2023
Int. Cl. G01N 27/404 (2006.01); C03B 33/02 (2006.01); C03C 15/00 (2006.01); C03C 17/06 (2006.01); C03C 23/00 (2006.01); C03C 27/10 (2006.01); G01N 27/406 (2006.01); G01N 27/413 (2006.01)
CPC G01N 27/404 (2013.01) [C03B 33/0222 (2013.01); C03C 15/00 (2013.01); C03C 17/06 (2013.01); C03C 23/0025 (2013.01); C03C 27/10 (2013.01); G01N 27/4062 (2013.01); G01N 27/413 (2013.01); C03C 2217/254 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A glass electrochemical sensor, comprising:
a glass substrate including a plurality of through glass vias (TGVs), wherein the plurality of TGVs are at least partially filled with an electrode material;
an electrode disposed on a bottom surface of the glass substrate adjacent to at least one of the TGVs; and
a first glass layer comprising a cavity;
wherein the bottom surface of the glass substrate is bonded to a first side of the first glass layer such that the electrode is positioned within the cavity.