US 11,952,664 B2
Substrate processing apparatus and method of manufacturing semiconductor device
Hidenari Yoshida, Toyama (JP); Takeo Hanashima, Toyama (JP); and Hiroaki Hiramatsu, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Dec. 8, 2022, as Appl. No. 18/077,607.
Application 18/077,607 is a continuation of application No. 16/047,611, filed on Jul. 27, 2018, granted, now 11,542,601.
Application 16/047,611 is a continuation of application No. PCT/JP2016/053782, filed on Feb. 9, 2016.
Prior Publication US 2023/0109474 A1, Apr. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC C23C 16/45578 (2013.01) [C23C 16/402 (2013.01); C23C 16/4412 (2013.01); C23C 16/45502 (2013.01); C23C 16/52 (2013.01); H01L 21/02123 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/67248 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a reaction tube having a process chamber where a substrate is processed;
a buffer chamber provided along a side of the reaction tube and configured to house a nozzle, communicate with the process chamber, and supply a process gas to the process chamber;
a cylindrical manifold connected to a lower end of the reaction tube and connected to the nozzle at a port provided on a side wall of the manifold; and
a shielding portion detachably provided in the reaction tube adjacent to the buffer chamber and configured to restrict the communication between the buffer chamber and the process chamber under the substrate.