US 11,952,661 B2
Deposition method
Hitoshi Kato, Iwate (JP); Kazumi Kubo, Iwate (JP); and Yutaka Takahashi, Iwate (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jul. 9, 2019, as Appl. No. 16/506,143.
Claims priority of application No. 2018-133602 (JP), filed on Jul. 13, 2018.
Prior Publication US 2020/0017968 A1, Jan. 16, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45542 (2013.01) [C23C 16/345 (2013.01); C23C 16/45565 (2013.01); H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01J 2237/3321 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A deposition method comprising:
forming an adsorption inhibiting region on an adsorption site formed on a plurality of substrates placed on a rotary table along a circumferential direction of the rotary table, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount, the adsorption inhibiting radicals being dispersively supplied to the adsorption site from gas discharge holes provided on a face of a fan-shaped showerhead extending along a radial direction of the rotary table, said face being parallel to the rotary table, said fan-shaped showerhead including a projecting strip provided on a surface at an outer periphery of the fan-shaped showerhead facing the rotary table, said fan-shaped showerhead having a thickness at the projecting strip in a direction perpendicular to a face of the fan-shaped showerhead facing the rotary table, said thickness being greater than a thickness of a part of the fan-shaped showerhead where the gas discharge holes are provided, said projecting strip extending on a circular arc of the fan-shaped showerhead, said gas discharge holes not being provided on the projecting strip;
causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and
depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma, wherein the adsorption inhibiting radicals is supplied while steps of adsorbing the raw material and depositing the film are performed,
wherein the method further comprises controlling an amount of the adsorption inhibiting radicals to be adsorbed by adjusting number of rotations of the rotary table while continuously supplying the adsorption inhibiting radicals, thereby controlling a film density of the reaction product, and
wherein the film is formed while blowing out the adsorption inhibiting radicals from the adsorption site by supplying the raw material gas.