US 11,952,658 B2
Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
Katja Väyrynen, Helsinki (FI); Timo Hatanpää, Espoo (FI); Mikko Ritala, Espoo (FI); and Markku Leskelä, Espoo (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Oct. 24, 2022, as Appl. No. 17/971,684.
Application 17/971,684 is a continuation of application No. 17/254,366, granted, now 11,499,222, previously published as PCT/IB2019/000817, filed on Jun. 21, 2019.
Claims priority of provisional application 62/690,478, filed on Jun. 27, 2018.
Prior Publication US 2023/0067660 A1, Mar. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/08 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/18 (2013.01) [C23C 16/08 (2013.01); C23C 16/45531 (2013.01); C23C 16/45546 (2013.01); C23C 16/45553 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A cyclic deposition process for depositing an intermetallic compound, the cyclic deposition method comprising the steps of:
providing a first gas-phase reactant comprising a first metal from a first gas-phase reactant source vessel to a reaction chamber to react with a surface of a substrate to form a first metal species; and
providing a second gas-phase reactant comprising a second metal to the reaction chamber to react with the first metal species to thereby form the intermetallic compound,
wherein the first gas-phase reactant comprises a group 3-group 12 metal and an adduct forming ligand, and
wherein the second gas-phase reactant comprises a metal-containing organic compound.