US 11,952,268 B2
Engineered substrates, free-standing semiconductor microstructures, and related systems and methods
Chantal Arena, Mesa, AZ (US); Nupur Bhargava, Hillsboro, OR (US); and Alec Fischer, Chandler, AZ (US)
Assigned to Lawrence Semiconductor Research Laboratory, Inc., Tempe, AZ (US)
Filed by Lawrence Semiconductor Research Laboratory, Inc., Tempe, AZ (US)
Filed on Jun. 14, 2021, as Appl. No. 17/304,094.
Prior Publication US 2022/0396476 A1, Dec. 15, 2022
Int. Cl. B81C 1/00 (2006.01); B81B 3/00 (2006.01)
CPC B81C 1/00476 (2013.01) [B81B 3/0072 (2013.01); B81B 2203/0118 (2013.01); B81C 2201/0109 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0133 (2013.01); B81C 2201/0177 (2013.01)] 17 Claims
OG exemplary drawing
 
9. A free-standing microstructure comprising:
a first silicon layer;
a relaxed second silicon layer, the relaxed second silicon layer comprising a monocrystalline silicon film including a plurality of dislocations and substantially free of residual strain; and
an intermediate layer between the first silicon layer and the relaxed second silicon layer comprising:
a material having a different lattice constant than the first silicon layer or the second silicon layer, the material consisting essentially of silicon and germanium; and
one or more voids wherein at least a portion of the material is absent between the first silicon layer and the relaxed second silicon layer.