US 11,952,267 B2
Modification to rough polysilicon using ion implantation and silicide
Alan Cuthbertson, San Jose, CA (US); and Daesung Lee, San Jose, CA (US)
Assigned to INVENSENSE, INC., San Jose, CA (US)
Filed by INVENSENSE, INC., San Jose, CA (US)
Filed on Jan. 26, 2022, as Appl. No. 17/584,698.
Application 17/584,698 is a division of application No. 16/796,310, filed on Feb. 20, 2020, granted, now 11,267,699.
Claims priority of provisional application 62/808,379, filed on Feb. 21, 2019.
Prior Publication US 2022/0144628 A1, May 12, 2022
Int. Cl. B81C 1/00 (2006.01); B81B 3/00 (2006.01)
CPC B81C 1/00166 (2013.01) [B81B 3/001 (2013.01); B81B 3/0056 (2013.01); B81B 3/0089 (2013.01); B81B 2203/04 (2013.01); B81C 1/00031 (2013.01); B81C 2201/0166 (2013.01); B81C 2201/115 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method of forming a Microelectromechanical System (MEMS) device, comprising:
depositing a hard mask on a single crystal silicon;
patterning the hard mask;
depositing metal on the single crystal silicon;
forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon;
removing unreacted metal;
stripping the hard mask from the single crystal silicon;
depositing and patterning a bond layer over the silicide; and
bonding the single crystal silicon to an inter metal dielectric (IMD) layer.