US 11,951,589 B2
Wafer edge asymmetry correction using groove in polishing pad
Jimin Zhang, San Jose, CA (US); Jianshe Tang, San Jose, CA (US); Brian J. Brown, Palo Alto, CA (US); Wei Lu, Fremont, CA (US); and Priscilla Diep, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 19, 2020, as Appl. No. 16/953,139.
Claims priority of provisional application 62/939,538, filed on Nov. 22, 2019.
Prior Publication US 2021/0154796 A1, May 27, 2021
Int. Cl. B24B 37/26 (2012.01); B24B 37/005 (2012.01); B24B 37/04 (2012.01); B24B 37/27 (2012.01)
CPC B24B 37/26 (2013.01) [B24B 37/005 (2013.01); B24B 37/042 (2013.01); B24B 37/27 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A chemical mechanical polishing system comprising:
a rotatable platen to hold a polishing pad, the platen rotatable by a motor, the polishing pad having a polishing surface and a polishing control groove concentric with an axis of rotation for the polishing pad;
a rotatable carrier head to hold a substrate against the polishing surface of the polishing pad during a polishing process, the carrier head laterally movable by a first actuator across the polishing pad and rotatable by a second actuator; and
a controller configured to control the first actuator and the second actuator such that lateral oscillation of the carrier head is synchronized with rotation of the carrier head and over a plurality of successive oscillations of the carrier head when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface, a second angular swath of the edge portion of the substrate, otherwise over-polished relative to the first angular swath, is at the azimuthal angular position the second angular swath overlies the polishing control groove.