US 11,951,587 B2
Zone-based CMP target control
Che-Liang Chung, Taoyuan (TW); Che-Hao Tu, Hsinchu (TW); Kei-Wei Chen, Tainan (TW); and Chih-Wen Liu, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 12, 2019, as Appl. No. 16/538,464.
Claims priority of provisional application 62/736,958, filed on Sep. 26, 2018.
Prior Publication US 2020/0094369 A1, Mar. 26, 2020
Int. Cl. B24B 37/005 (2012.01); B24B 51/00 (2006.01); H01L 21/67 (2006.01)
CPC B24B 37/005 (2013.01) [B24B 51/00 (2013.01); H01L 21/67253 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of performing chemical mechanical polishing (CMP) on a wafer, comprising:
identifying a first zone and a second zone on a surface of the wafer, the first zone having a structure feature different from a structure feature of the second zone;
achieving a first CMP target thickness on the first zone by polishing the wafer using a first CMP process;
removing a first structure feature having a first material from the second zone to generate a recess;
filling the recess with a second material that is different from the first material; and
after the filling the recess, achieving the first CMP target thickness on the second zone by polishing the wafer using a second CMP process.