US 12,274,184 B2
Magnetoresistance effect element
Shinto Ichikawa, Tokyo (JP); Tsuyoshi Suzuki, Tokyo (JP); Katsuyuki Nakada, Tokyo (JP); and Tomoyuki Sasaki, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Appl. No. 17/631,571
Filed by TDK CORPORATION, Tokyo (JP)
PCT Filed Jun. 24, 2020, PCT No. PCT/JP2020/024874
§ 371(c)(1), (2) Date Jan. 31, 2022,
PCT Pub. No. WO2021/029148, PCT Pub. Date Feb. 18, 2021.
Claims priority of application No. 2019-148100 (JP), filed on Aug. 9, 2019.
Prior Publication US 2022/0278271 A1, Sep. 1, 2022
Int. Cl. H10N 50/85 (2023.01); H10N 50/10 (2023.01)
CPC H10N 50/85 (2023.02) [H10N 50/10 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A magnetoresistance effect element comprising:
a first ferromagnetic layer;
a second ferromagnetic layer;
a tunnel barrier layer disposed between the first and second ferromagnetic layers; and
a metal oxide layer in contact with a surface of the second ferromagnetic layer opposite to a surface in contact with the tunnel barrier layer, wherein
a ratio of oxygen is higher than a total ratio of metal elements in a composition formula expressed in a stoichiometric composition in a metal oxide constituting the metal oxide layer, and
an oxygen deficiency ratio of the metal oxide layer is higher than an oxygen deficiency ratio of the tunnel barrier layer.