US 12,274,178 B2
Logic element using spin-orbit torque and magnetic tunnel junction structure
Jin Pyo Hong, Seoul (KR); Jeong Hun Shin, Seoul (KR); and Jeong Woo Seo, Seoul (KR)
Assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
Appl. No. 17/911,047
Filed by IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
PCT Filed Feb. 25, 2021, PCT No. PCT/KR2021/002337
§ 371(c)(1), (2) Date Sep. 12, 2022,
PCT Pub. No. WO2021/182778, PCT Pub. Date Sep. 16, 2021.
Claims priority of application No. 10-2020-0031196 (KR), filed on Mar. 13, 2020.
Prior Publication US 2023/0119656 A1, Apr. 20, 2023
Int. Cl. H10N 50/10 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01F 10/329 (2013.01); H10B 61/22 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A logic device comprising:
a non-magnetic metal layer through which a program current for generating spin orbital torque flows and output voltage is received, and having cross shape;
a lower magnetic part formed on the non-magnetic metal layer and having perpendicular magnetic anisotropy set by the program current, and being placed in straight line along two opposite ends of four ends of the cross shape; and
an upper magnetic part formed on the lower magnetic part and having at least two pinned magnetization units that are spaced apart from each other and face each other,
wherein the lower magnetic part comprises:
a common free layer formed on the non-magnetic metal layer and having a magnetization direction set by the program current, and
a common tunnel junction layer formed on the common free layer.