| CPC H10N 10/82 (2023.02) [H10N 10/01 (2023.02); H10N 10/17 (2023.02); H10N 10/852 (2023.02)] | 20 Claims |

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1. A thermoelectric element comprising:
a first substrate;
a first electrode disposed on the first substrate;
a single semiconductor structure disposed on the first electrode;
a second electrode disposed on the single semiconductor structure,
wherein an entirety of the single semiconductor structure is a single leg disposed between the first electrode and the second electrode;
a second substrate disposed on the second electrode; and
a terminal electrode disposed on the second substrate,
wherein the second substrate includes a first surface facing the second electrode, a second surface opposite to the first surface, and a through hole passing through the first surface and the second surface, and
wherein a ratio of a width of the through hole to a distance between the terminal electrode and the second electrode closest to the terminal electrode is 0.4:1 to 0.6:1.
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