US 12,274,129 B2
Thin film transistor substrate, display apparatus, and method of manufacturing the thin film transistor substrate
Keunwoo Kim, Yongin-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-Si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Jan. 16, 2024, as Appl. No. 18/413,059.
Application 18/413,059 is a division of application No. 17/411,870, filed on Aug. 25, 2021, granted, now 11,910,648.
Claims priority of application No. 10-2020-0162678 (KR), filed on Nov. 27, 2020.
Prior Publication US 2024/0164141 A1, May 16, 2024
Int. Cl. H01L 27/14 (2006.01); H10K 59/121 (2023.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01)
CPC H10K 59/1213 (2023.02) [H10K 59/1216 (2023.02); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 27/1274 (2013.01); H01L 29/66757 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01); H10K 59/1201 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A method of manufacturing a thin-film transistor substrate, the method comprising:
forming a semiconductor layer on a substrate, the semiconductor layer including a crystallization region and a non-crystallization region;
sequentially forming a lower electrode and an upper electrode on the semiconductor layer; and
injecting impurities into the semiconductor layer by using the upper electrode as a doping mask to form, in the semiconductor layer, a first conductive region, a second conductive region, and a semiconductor region between the first conductive region and the second conductive region,
wherein a first width of the semiconductor region in a first direction is greater than a second width of the lower electrode in the first direction, and
a first boundary between the semiconductor region and the first conductive region is determined by an edge of the upper electrode,
a second boundary between the semiconductor region and the second conductive region is determined by an edge of the lower electrode or an edge of the upper electrode,
the semiconductor region includes a first channel region overlapping the lower electrode and a second channel region that does not overlap the lower electrode but overlaps the upper electrode,
the non-crystallization region includes at least a part of the second channel region, and
the crystallization region includes the second conductive region and at least a part of the first channel region.