US 12,274,110 B2
Simplified structure of two-terminal tandem solar cells with transparent conducting oxide junction material
Apolline Puaud, Grenoble (FR); Muriel Matheron, Grenoble (FR); and Maria-Delfina Munoz, Grenoble (FR)
Assigned to COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR); and 3SUN S.R.L., Catania (IT)
Appl. No. 18/257,812
Filed by COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR); and 3SUN S.R.L., Catania (IT)
PCT Filed Dec. 13, 2021, PCT No. PCT/FR2021/052295
§ 371(c)(1), (2) Date Jun. 15, 2023,
PCT Pub. No. WO2022/129757, PCT Pub. Date Jun. 23, 2022.
Claims priority of application No. 2013592 (FR), filed on Dec. 18, 2020.
Prior Publication US 2024/0107785 A1, Mar. 28, 2024
Int. Cl. H10K 39/15 (2023.01); H10K 85/50 (2023.01)
CPC H10K 39/15 (2023.02) [H10K 85/50 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A 2-terminal PIN-type tandem photovoltaic structure comprising, from the rear face to the front face:
a first solar cell with a silicon heterojunction comprising a first P-type layer made of doped amorphous silicon and a substrate of N-type doped crystalline silicon disposed between a first layer of intrinsic amorphous silicon and a second layer of intrinsic amorphous silicon,
a junction layer,
a second perovskite-type cell comprising a second P-type layer, an active layer made of a perovskite material and an N-type layer,
wherein the junction layer is made of a transparent conductive oxide,
and wherein the junction layer is in direct physical contact with the second layer of intrinsic amorphous silicon of the first solar cell and with the second P-type layer of the second solar cell,
the junction layer serving as an N-type layer in the first solar cell.