US 12,274,109 B2
Methods of making semiconductor perovskite layers and compositions thereof
Jing-Shun Huang, Pasadena, CA (US); John Iannelli, San Marino, CA (US); Jiunn Benjamin Heng, Los Altos Hills, CA (US); Jeong Chul Lee, Monrovia, CA (US); Liam Sohngen, Pasadena, CA (US); Brian D. Hunt, La Crescenta, CA (US); Eric W. Wong, Los Angeles, CA (US); and Chenyu Chou, Pasadena, CA (US)
Assigned to Caelux Corporation, Baldwin Park, CA (US)
Filed by Caelux Corporation, Pasadena, CA (US)
Filed on May 24, 2022, as Appl. No. 17/752,764.
Application 17/752,764 is a continuation of application No. PCT/US2021/051465, filed on Sep. 22, 2021.
Claims priority of provisional application 63/081,747, filed on Sep. 22, 2020.
Claims priority of provisional application 63/081,750, filed on Sep. 22, 2020.
Claims priority of provisional application 63/081,753, filed on Sep. 22, 2020.
Claims priority of provisional application 63/081,758, filed on Sep. 22, 2020.
Claims priority of provisional application 63/081,756, filed on Sep. 22, 2020.
Claims priority of provisional application 63/081,755, filed on Sep. 22, 2020.
Claims priority of provisional application 63/081,752, filed on Sep. 22, 2020.
Claims priority of provisional application 63/090,636, filed on Oct. 12, 2020.
Claims priority of provisional application 63/090,642, filed on Oct. 12, 2020.
Claims priority of provisional application 63/090,643, filed on Oct. 12, 2020.
Claims priority of provisional application 63/126,481, filed on Dec. 16, 2020.
Claims priority of provisional application 63/126,483, filed on Dec. 16, 2020.
Claims priority of provisional application 63/159,277, filed on Mar. 10, 2021.
Claims priority of provisional application 63/176,845, filed on Apr. 19, 2021.
Claims priority of provisional application 63/196,585, filed on Jun. 3, 2021.
Claims priority of provisional application 63/196,601, filed on Jun. 3, 2021.
Claims priority of provisional application 63/322,084, filed on Mar. 21, 2022.
Prior Publication US 2023/0110770 A1, Apr. 13, 2023
Prior Publication US 2023/0320108 A9, Oct. 5, 2023
Int. Cl. H10K 30/10 (2023.01); H01G 9/00 (2006.01); H01G 9/20 (2006.01); H10K 19/20 (2023.01); H10K 30/30 (2023.01); H10K 30/57 (2023.01); H10K 30/82 (2023.01); H10K 30/87 (2023.01); H10K 30/88 (2023.01); H10K 85/10 (2023.01); H10K 85/20 (2023.01); H10K 85/30 (2023.01); H10K 102/10 (2023.01)
CPC H10K 30/10 (2023.02) [H01G 9/0036 (2013.01); H01G 9/2009 (2013.01); H01G 9/2018 (2013.01); H01G 9/2027 (2013.01); H01G 9/2072 (2013.01); H01G 9/2077 (2013.01); H01G 9/209 (2013.01); H10K 19/20 (2023.02); H10K 30/30 (2023.02); H10K 30/57 (2023.02); H10K 30/82 (2023.02); H10K 30/87 (2023.02); H10K 30/88 (2023.02); H10K 85/141 (2023.02); H10K 85/215 (2023.02); H10K 85/30 (2023.02); H10K 2102/103 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A method, comprising:
(a) providing a substrate comprising a hole transport layer;
(b) applying a solution to said substrate to form a coating of the solution on a surface of the hole transport layer, the solution comprising a perovskite precursor and a solvent, the perovskite precursor comprising a metal halide and organohalides selected from the group consisting of formamidinium chloride, formamidinium bromide, formamidinium iodide, methylammonium chloride, methylammonium bromide, methylammonium iodide, and butylammonium halides, and the solvent comprising N,N′-dimethylpropyleneurea;
(c) removing the solvent from the coating to form a perovskite precursor layer on the substrate;
(d) annealing said perovskite precursor layer at a temperature in a range from 40° C. to 120° C. to form a perovskite layer; wherein said perovskite layer has a composition of MAn1FAn2Csn3PbX3, where MA is methylammonium, FA is formamidinium, Cs is Cesium, Pb is lead, and X is selected from the group consisting of fluorine, chlorine, bromine, and iodine, wherein n1, n2, and n3 are independently greater than 0 and less than 1 and n1+n2+n3=1;
(e) applying an electron transport layer to the perovskite layer;
(f) forming a transparent conducting layer on the electron transport layer, forming the transparent conducting layer comprising creating a buffer layer of a transparent conducting oxide on the electron transport layer using a physical vapor deposition process at a first power and then creating a bulk layer of the transparent conducting oxide on the buffer layer using the physical vapor deposition process at a second power greater than the first power;
(g) subjecting said perovskite layer, electron transport layer, and transparent conducting layer to an encapsulation lamination process at a temperature of at least 70° C. and at most 130° C. to provide a stack comprising the substrate, the perovskite layer, the electron transport layer, and the transparent conducting layer;
(h) forming a solar cell using the stack, wherein the perovskite layer in the solar cell retains at least 80% solar conversion efficiency relative to an initial solar conversion efficiency after 300 hours of illumination under one sun conditions at >25° C. and <100° C.