| CPC H10F 39/811 (2025.01) [G02B 3/0037 (2013.01); H04N 25/20 (2023.01); H04N 25/532 (2023.01); H04N 25/771 (2023.01); H10F 39/18 (2025.01); H10F 39/8033 (2025.01); H10F 39/80373 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01)] | 17 Claims |
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12. An image sensor, comprising:
a semiconductor wafer having:
a light receiving surface; and
an electrical connection surface opposite the light receiving surface; and
a pixel within the semiconductor wafer extending between the light receiving surface and the electrical connection surface and enclosed by deep trench isolation walls that extend from the light receiving surface toward the electrical connection surface; wherein the pixel comprises:
an inert material layer adjacent to the light receiving surface;
a silicon layer below the inert material layer;
a photodiode within the silicon layer and spaced apart from the inert material layer;
an isolation well layer below the silicon layer;
a first storage node under the photodiode;
a second storage node under the photodiode;
a first vertical transfer gate extending from the electrical connection surface to the photodiode and proximate to the first storage node and operable to control movement of charge carriers from the photodiode to the first storage node;
a second vertical transfer gate extending from the electrical connection surface to the photodiode and proximate to the second storage node and operable to control movement of charge carriers from the photodiode to the second storage node; and
a floating diffusion node connected to the first storage node, connected to the second storage node, and disposed under the photodiode.
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