| CPC H10F 39/8067 (2025.01) [H10F 39/014 (2025.01); H10F 39/024 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01)] | 19 Claims |

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1. An image sensor, comprising:
a substrate including a first surface and a second surface opposite to the first surface
a first unit pixel including a first photoelectric conversion device (PD), a second PDs, and a first microlens on the first and second PDs;
a second unit pixel including a third PD, a fourth PD, and a second microlens on the third and fourth PDs;
an isolation trench between the first unit pixel and the second unit pixel, wherein the isolation trench is configured to connect to the second surface of the substrate and has a first surface,
an isolation layer between the first PD and the second PD, wherein the isolation layer has a first surface; and
wherein the isolation trench extends in a first direction in a plan view,
wherein the isolation trench includes a first material and the isolation layer includes a second material different from the first material,
wherein the first microlens is on the second surface of the substrate,
wherein a distance from the first surface of the substrate to the first surface of the isolation trench in a second direction is different from a distance from the first surface of the substrate to the first surface of the isolation layer in the second direction,
wherein the second direction is perpendicular to the first direction,
wherein the isolation trench includes a metal material containing layer and a silicon oxide layer, and
wherein the silicon oxide layer covers sidewalls and the first surface of the isolation trench.
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