US 12,274,096 B2
Flexible photovoltaic cell, and methods and systems of producing it
Eran Maimon, Kibbutz Nahsholim (IL); Ramon Joseph Albalak, Haifa (IL); Oded Rozenberg, Kibbutz Nahsholim (IL); and Esther Westreich, Neve Yarak (IL)
Assigned to SOLARPAINT LTD., Yokneam Illit (IL)
Filed by SOLARPAINT LTD., Yokneam Illit (IL)
Filed on Apr. 15, 2024, as Appl. No. 18/635,039.
Application 18/635,039 is a continuation of application No. 17/353,867, filed on Jun. 22, 2021, granted, now 11,978,815.
Application 17/353,867 is a continuation in part of application No. PCT/IL2019/051416, filed on Dec. 26, 2019.
Application 17/353,867 is a continuation in part of application No. 16/362,665, filed on Mar. 24, 2019, granted, now 11,081,606, issued on Aug. 3, 2021.
Application PCT/IL2019/051416 is a continuation in part of application No. 16/362,665, filed on Mar. 24, 2019, granted, now 11,081,606, issued on Aug. 3, 2021.
Claims priority of provisional application 62/785,282, filed on Dec. 27, 2018.
Prior Publication US 2024/0282874 A1, Aug. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 19/30 (2025.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01)
CPC H10F 19/30 (2025.01) [H10F 71/00 (2025.01); H10F 77/227 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, the PV cell comprising:
a semiconductor wafer that is freestanding and carrier-less,
having a thickness, and having a first surface, and a having second surface that is opposite to said first surface;
a set of non-transcending gaps, within said semiconductor wafer,
wherein each non-transcending gap penetrates from the first surface of said semiconductor wafer towards the second surface of said semiconductor wafer but reaches to a depth of between 50 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface;
wherein each non-transcending gap does not entirely penetrate through an entirety of the thickness of said semiconductor wafer,
wherein said semiconductor wafer maintains between 1 to 50 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by said non-transcending gaps,
wherein each non-transcending gap is entirely filled with an elastomer that absorbs mechanical shocks and dissipates mechanical forces.