| CPC H10D 30/475 (2025.01) [H10D 62/328 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] | 9 Claims |
|
1. A semiconductor device comprising:
a substrate;
a semiconductor layer provided on the substrate and having a plurality of GaN channel layers and a plurality of AlGaN barrier layers which are alternately laminated in a lamination direction from the substrate;
a source electrode and a drain electrode electrically connected to the plurality of GaN channel layers; and
a gate electrode provided between the source electrode and the drain electrode to control a potential of the semiconductor layer,
wherein the plurality of AlGaN barrier layers includes a first AlGaN barrier layer closest to the substrate and a second AlGaN barrier layer second closest to the substrate,
wherein the first AlGaN barrier layer has a first Al composition ratio a second Al composition ratio of the second AlGaN barrier layer,
wherein the plurality of GaN channel layers includes a first GaN channel layer closest to the substrate,
wherein the gate electrode penetrates the plurality of AlGaN barrier layers in the lamination direction and reaches the first GaN channel layer, and
wherein the plurality of GaN channel layers includes four or more GaN channel layers in the lamination direction and the plurality of AlGaN barrier layers includes four or more AlGaN barrier layers in the lamination direction.
|