US 12,274,078 B2
Memory device
Jenn-Gwo Hwu, Taipei (TW); Bo-Jyun Chen, Taoyuan (TW); and Kuan-Wun Lin, Changhua County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW); and NATIONAL TAIWAN UNIVERSITY, Taipei (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW); and NATIONAL TAIWAN UNIVERSITY, Taipei (TW)
Filed on Feb. 2, 2023, as Appl. No. 18/163,520.
Application 17/541,999 is a division of application No. 16/727,686, filed on Dec. 26, 2019, granted, now 11,195,835, issued on Dec. 7, 2021.
Application 18/163,520 is a continuation of application No. 17/541,999, filed on Dec. 3, 2021, granted, now 11,574,908.
Prior Publication US 2023/0189539 A1, Jun. 15, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 99/00 (2023.01)
CPC H10B 99/00 (2023.02) 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a semiconductor substrate; and
a memory cell at a memory region of the semiconductor substrate and comprising:
a memory portion of the semiconductor substrate;
a tunneling layer over the memory portion of the semiconductor substrate;
a storage layer over and in contact with the tunneling layer;
a first electrode over and in contact with the storage layer; and
a second electrode over and in contact with the tunneling layer but spaced apart from the storage layer.