US 12,274,073 B2
Multiferroic memory with piezoelectric layers and related methods
Matt Bauer, Melbourne, FL (US); and Steven R. Snyder, Palm Bay, FL (US)
Assigned to EAGLE TECHNOLOGY, LLC, Melbourne, FL (US)
Filed by EAGLE TECHNOLOGY, LLC, Melbourne, FL (US)
Filed on Jan. 25, 2022, as Appl. No. 17/583,596.
Prior Publication US 2023/0240080 A1, Jul. 27, 2023
Int. Cl. H10B 61/00 (2023.01); G11C 11/14 (2006.01); G11C 11/15 (2006.01); G11C 11/16 (2006.01); G11C 11/56 (2006.01); H10N 30/00 (2023.01); H10N 30/05 (2023.01); H10N 30/85 (2023.01); H10N 30/87 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [G11C 11/14 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); G11C 11/5657 (2013.01); H10N 30/05 (2023.02); H10N 30/704 (2024.05); H10N 30/85 (2023.02); H10N 30/87 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); G11C 11/15 (2013.01); G11C 11/165 (2013.01)] 23 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a first electrode;
a first piezoelectric layer electrically coupled to the first electrode;
a first magnetostrictive layer above the first piezoelectric layer;
a first tunnel barrier layer above the first magnetostrictive layer;
a ferromagnetic layer above the first tunnel barrier layer;
a second electrode electrically coupled to the ferromagnetic layer;
a second tunnel barrier layer above the ferromagnetic layer;
a second magnetostrictive layer above the second tunnel barrier layer;
a second piezoelectric layer above the second magnetostrictive layer; and
a third electrode electrically coupled to the second piezoelectric layer;
the first piezoelectric layer being strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer being strained responsive to voltage applied across the second and third electrodes, to change a ferroelectric state of the ferromagnetic layer while retaining a prior ferroelectric state of the ferromagnetic layer.